Silicon nitride

Results: 161



#Item
21NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from

NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from

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Source URL: cdn.macom.com

Language: English - Date: 2014-04-22 08:58:19
    22NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz

    NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz

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    Source URL: cdn.macom.com

    Language: English - Date: 2014-04-11 09:32:48
      23NPT2018  Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology

      NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology

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      Source URL: cdn.macom.com

      Language: English - Date: 2014-04-14 12:40:11
        24Press Release, April 7, 2015 Elite students from the University of Erlangen met crystal growth experts of Fraunhofer IISB Materials play an indispensible role in our everyday lives. In order to solve key challenges facin

        Press Release, April 7, 2015 Elite students from the University of Erlangen met crystal growth experts of Fraunhofer IISB Materials play an indispensible role in our everyday lives. In order to solve key challenges facin

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        Source URL: www.elite-map.techfak.uni-erlangen.de

        Language: English - Date: 2015-04-14 06:47:39
        25GaN Manifesto  John Croteau President and CEO  The Path to Mainstream GaN Commercialization

        GaN Manifesto John Croteau President and CEO The Path to Mainstream GaN Commercialization

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        Source URL: www.macom.com

        Language: English - Date: 2014-05-12 09:10:47
        26NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz

        NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz

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        Source URL: cdn.macom.com

        Language: English - Date: 2014-04-11 09:34:31
        27   LED DOT MATRIX BL-M23A881XXX Features: Ø 60.20mm (2.3”) F 5.0 dot matrix LED display, RGB COLOR

          LED DOT MATRIX BL-M23A881XXX Features: Ø 60.20mm (2.3”) F 5.0 dot matrix LED display, RGB COLOR

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        Source URL: shop.emscdn.com

        Language: English - Date: 2010-06-24 13:14:53
        28F R A U N H O F E R - I N S T I T U T F Ü R I nte g rierte S y ste m e un d B aue l e m entete c hno l o g ie I I S B  Materials for Electronics 1

        F R A U N H O F E R - I N S T I T U T F Ü R I nte g rierte S y ste m e un d B aue l e m entete c hno l o g ie I I S B Materials for Electronics 1

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        Source URL: www.iisb.fraunhofer.de

        Language: English - Date: 2015-06-09 12:08:16
        29Coupling Effect between Silicon Nitride Optical Waveguide and Gold Nanoparticle Chain in the Visible Spectrum 1, 2 Yida Wen 1

        Coupling Effect between Silicon Nitride Optical Waveguide and Gold Nanoparticle Chain in the Visible Spectrum 1, 2 Yida Wen 1

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        Source URL: www.chaire-psa.u-psud.fr

        Language: English - Date: 2014-07-03 10:37:27
        30Press Release, April 7, 2015 Elite students from the University of Erlangen met crystal growth experts of Fraunhofer IISB Materials play an indispensible role in our everyday lives. In order to solve key challenges facin

        Press Release, April 7, 2015 Elite students from the University of Erlangen met crystal growth experts of Fraunhofer IISB Materials play an indispensible role in our everyday lives. In order to solve key challenges facin

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        Source URL: www.elite-map.tf.uni-erlangen.de

        Language: English - Date: 2015-04-14 06:47:39