21![NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from](https://www.pdfsearch.io/img/7deb38a6a7343c0788e7e25c83878f5d.jpg) | Add to Reading ListSource URL: cdn.macom.comLanguage: English - Date: 2014-04-22 08:58:19
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22![NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz](https://www.pdfsearch.io/img/56ce12bff31632735704e1af9eacd6e4.jpg) | Add to Reading ListSource URL: cdn.macom.comLanguage: English - Date: 2014-04-11 09:32:48
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23![NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology](https://www.pdfsearch.io/img/c273b80b3ffb5fb9beb393fc3b9b6de4.jpg) | Add to Reading ListSource URL: cdn.macom.comLanguage: English - Date: 2014-04-14 12:40:11
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24![Press Release, April 7, 2015 Elite students from the University of Erlangen met crystal growth experts of Fraunhofer IISB Materials play an indispensible role in our everyday lives. In order to solve key challenges facin Press Release, April 7, 2015 Elite students from the University of Erlangen met crystal growth experts of Fraunhofer IISB Materials play an indispensible role in our everyday lives. In order to solve key challenges facin](https://www.pdfsearch.io/img/a79291622b316aca2eeaa2a51c53d1a9.jpg) | Add to Reading ListSource URL: www.elite-map.techfak.uni-erlangen.deLanguage: English - Date: 2015-04-14 06:47:39
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25![GaN Manifesto
John Croteau President and CEO The Path to Mainstream GaN Commercialization GaN Manifesto
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26![NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz](https://www.pdfsearch.io/img/68bad53623640afa021718234eb6a021.jpg) | Add to Reading ListSource URL: cdn.macom.comLanguage: English - Date: 2014-04-11 09:34:31
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27![LED DOT MATRIX BL-M23A881XXX Features: Ø 60.20mm (2.3”) F 5.0 dot matrix LED display, RGB COLOR LED DOT MATRIX BL-M23A881XXX Features: Ø 60.20mm (2.3”) F 5.0 dot matrix LED display, RGB COLOR](https://www.pdfsearch.io/img/6074c9ee4710229afa665f503d8fd8dc.jpg) | Add to Reading ListSource URL: shop.emscdn.comLanguage: English - Date: 2010-06-24 13:14:53
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28![F R A U N H O F E R - I N S T I T U T F Ü R I nte g rierte S y ste m e un d B aue l e m entete c hno l o g ie I I S B Materials for Electronics 1 F R A U N H O F E R - I N S T I T U T F Ü R I nte g rierte S y ste m e un d B aue l e m entete c hno l o g ie I I S B Materials for Electronics 1](https://www.pdfsearch.io/img/f098c354481d975ee24df23c05027455.jpg) | Add to Reading ListSource URL: www.iisb.fraunhofer.deLanguage: English - Date: 2015-06-09 12:08:16
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29![Coupling Effect between Silicon Nitride Optical Waveguide and Gold Nanoparticle Chain in the Visible Spectrum 1, 2 Yida Wen 1 Coupling Effect between Silicon Nitride Optical Waveguide and Gold Nanoparticle Chain in the Visible Spectrum 1, 2 Yida Wen 1](https://www.pdfsearch.io/img/073620b66e8896bc64b884178d4bbaf2.jpg) | Add to Reading ListSource URL: www.chaire-psa.u-psud.frLanguage: English - Date: 2014-07-03 10:37:27
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30![Press Release, April 7, 2015 Elite students from the University of Erlangen met crystal growth experts of Fraunhofer IISB Materials play an indispensible role in our everyday lives. In order to solve key challenges facin Press Release, April 7, 2015 Elite students from the University of Erlangen met crystal growth experts of Fraunhofer IISB Materials play an indispensible role in our everyday lives. In order to solve key challenges facin](https://www.pdfsearch.io/img/22eb072cb1a3b14778774a6ad5f521d8.jpg) | Add to Reading ListSource URL: www.elite-map.tf.uni-erlangen.deLanguage: English - Date: 2015-04-14 06:47:39
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